The second technological field, also exhibiting rapid growth, particularly in the informatics industry, is that of thin film oxides designed to satisfy the continued drive towards miniaturization, higher speed circuits and nonvolatile memories. Coming generations of computer chips, with lateral feature sizes dropping ultimately below 0.1 micron, will no longer be able to utilize silica as the dielectric in MOSFET devices, given the need to reduce its thickness to atomic dimensions to insure adequate levels of capacitance. New oxides, with considerably higher dielectric constants, but with more complex processing procedures, are now under consideration to replace silica. Nonvolatile memories, based on oxide ferroelectric films, are beginning to enter the marketplace. Optimum performance requires a detailed understanding of how film composition, processing, and electrode selection impact device stability. Related thin film piezo- and pyro-electrics promise to play important roles in the development of MEMS-based devices in the sensor, display and communications fields. Workshop II, chaired by Prof. Ramesh, a recognized authority on the physics, fabrication and application of thin film oxides, has assembled a team of experts drawn from industry and academia to address the latest means for the deposition of complex thin film oxides, interpret the structure-property-processing relationships and explain the strategies being followed to achieve full scale process integration of these oxides with Si technology.

Overview of ionic and electronic transport in oxides; review roles of structure (crystal, defect, electronic band and microstructure) and chemistry in controlling properties including recent interest in nanostructured oxides. Discuss principles and application of solid electrolytes and mixed ionic-electronic conductors to fuel cells, batteries and sensors and related devices and means for characterizing their electrical, electrochemical and diffusive properties. Brief overview of fabrication methods utilized in the production of devices.

Basic Principles
Defect chemistry and charge transport	T. Norby	University of Oslo, Norway
Electrical and electrochemical characterization	A. Weber	University of Karlsruhe, Germany
Application of SIMS analysis for investigation on ionic and electronic transport mechanism	N. Sakai	AIST, Japan
Electrochemical reactions at electrodes: mechanisms and modeling	J. Fleig	Max-Planck-Institut, Germany
Principles and Application
Sensors	J. Riegel	Bosch, Germany
Fuel cells	E. Ivers-Tiffée	University of Karlsruhe, Germany
Batteries	M. Wohlfahrt-Mehrens	ZSW-Ulm, Germany
Thermodynamic considerations on applications	H. Yokokawa	AIST, Japan
Fabrication methods	L. Gauckler	ETH-Zürich, Switzerland

This tutorial session will address the Science and Technology of Electroceramic Thin Films for use in Microelectronics. A set of four lecturers will present extended, class-room style lectures on various thin film processing routes for the deposition of these complex oxides, structure-property-processing interrelationships and materials integration strategies as well as a full scale process integration on Si wafers. This tutorial will use non-volatile memories as a prototypical example to illustrate the role of various process modules. This tutorial is aimed at students, postdocs and researchers who are either entering into the field of electroceramic thin films or researchers who are interested in the state-of-the-art in this field.

Physical vapor deposition	D. Schlom	Penn. State University, USA
Sputter deposition processes	C.B. Eom	University of Wisconsin, Madison, USA
Materials integration approaches	R. Ramesh	University of Maryland, USA
Process integration	S. Aggarwal	Texas Instruments, USA